Physical and chemical mechanisms in oxide-based resistance random access memory

Physical and chemical mechanisms in oxide-based resistance random access memory

In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reac...

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

In this letter, a double active layer (Zr:SiOx/C:SiOx) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiOx layer. Compa...

Resistive Random Access Memory (ReRAM): A Metal Oxide Memory Cell

We review the recent progress in the ReRAM technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. We first provide a brief historical overview of the research in this field. We also provide a technological overview and the epoch-making achievements, followed by an account ...

Demonstration and Modeling of Multi-Bit Resistance Random Access Memory

Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution...

Design, Fabrication, and Characterization of Nano-scale Cross-Point Hafnium Oxide-Based Resistive Random Access Memory